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C3474

Toshiba
Part Number C3474
Manufacturer Toshiba
Description 2SC3474
Published Jun 8, 2015
Detailed Description 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Switching Applications Solenoid Drive Applications Indu...
Datasheet PDF File C3474 PDF File

C3474
C3474

Overview
2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Switching Applications Solenoid Drive Applications Industrial Applications Unit: mm · High DC current gain: hFE = 500 (min) (IC = 400 mA) · Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 7 2 0.
5 1.
0 20 150 −55 to 150 Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.
36 g (typ.
) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.
36 g (typ.
) 1 2002-07-23 2SC3474 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob VCB = 80 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 400 mA IC = 300 mA, IB = 1 mA IC = 300 mA, IB = 1 mA VCE = 2 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Min Typ.
Max Unit ― ― 1 µA ― ― 1 µA 80 ― ― V 500 ― ― ― 0.
3 0.
5 V ― ― 1.
1 V ― 85 ― MHz ― 50 ― pF Turn-on time Switching time Storage time Fall time ton 20 µs IB1 OUTPUT ― 2 ― INPUT IB1 100 Ω tstg IB2 IB2 ― 5 ― µs VCC = 30 V tf IB1 = −IB2 = 1 mA, DUTY CYCLE ≤ 1% ―2― Marking C3474 Product No.
Lot No.
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture 2 2002-07-23 Collector current IC (A) 2.
0 Common emitter Tc = 25°C 1.
6 1.
2 IC – VCE 2.
0 1.
6 1.
2 1 0.
8 0.
6 0.
8 0.
4 0.
4 IB = 0.
2 mA 0 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 2.
0 1...


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