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FW103

Sanyo Semicon Device
Part Number FW103
Manufacturer Sanyo Semicon Device
Description P-Channel Silicon MOSFET
Published Mar 23, 2005
Detailed Description Ordering number : EN5305A P-Channel Silicon MOSFET FW103 Ultrahigh-Speed Switching Applications Features • Low ON resi...
Datasheet PDF File FW103 PDF File

FW103
FW103


Overview
Ordering number : EN5305A P-Channel Silicon MOSFET FW103 Ultrahigh-Speed Switching Applications Features • Low ON resistance • Ultrahigh-speed switching.
• Composite type with two 4V-drive P-channel MOSFETs facilitating high-density mounting.
• Matched pair capability.
Package Dimensions unit: mm 2129-SOP8 [FW103] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation VDSS VGSS ID IDP PD PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.
8mm) 1unit Total Dissipation PT Mounted on a ceramic board (1000mm2×0.
8mm) Channel Temperature Tch Storage temperature Tstg Electrical Characteristics at Ta=25°C Parameter Symbol Conditions D-S Breakdown Voltage V(BR)DSS Zero-Gate-Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance yfs Static Drain-to-Source RDS(on) ON-State Resistance RDS(on) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–3A ID=–3A, VGS=–10V ID=–3A, VGS=–4V VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Ratings –30 ±20 –3 –32 1.
7 Unit V V A A W 2.
0 W 150 –55 to +150 °C °C Ratings Unit min typ max –30 V –100 µA ±10 µA –1.
0 –2.
5 V 24 S 95 125 mΩ 150 205 mΩ 550 pF 370 pF 70 pF Continued on next page.
SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN O1397TS (KOTO) TA-0255 No.
5305-1/3 Continued from preceding page.
Parameter Symbol Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage td(on) tr td(off) tf VSD Switching Time Test Circuit FW103 Conditions See specified Te...



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