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FW115

Sanyo Semicon Device
Part Number FW115
Manufacturer Sanyo Semicon Device
Description P-Channel Silicon MOS FET
Published Mar 23, 2005
Detailed Description Ordering number :EN5849 P-Channel Silicon MOS FET FW115 S/W Load Applications Features · 4V drive. · Low ON resistance...
Datasheet PDF File FW115 PDF File

FW115
FW115

Overview
Ordering number :EN5849 P-Channel Silicon MOS FET FW115 S/W Load Applications Features · 4V drive.
· Low ON resistance.
Package Dimensions unit:mm 2129 [FW115] 8 5 0.
3 5.
0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.
595 1.
27 0.
43 0.
1 1.
5 1.
8max 1 4 0.
2 1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SOP8 4.
4 Conditions Ratings –30 ±20 –3 6.
0 Unit V V A A W W ˚C ˚C PW≤10µs, duty cycle≤1% Mounted on ceramic board (1200mm2×0.
8mm) 1unit Mounted on ceramic board (1200mm2×0.
8mm) –32 1.
7 2.
0 150 –55 to +150 Electrical Characteristics at Ta = 25˚C Parameter D-S Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Current Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–3A ID=–3A, VGS=–10V ID=–1A, VGS=–4V VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=–10V, VGS=–10V, ID=–3A VDS=–10V, VGS=–10V, ID=–3A VDS=–10V, VGS=–10V, ID=–3A IS=–3A, VGS=0 –1.
0 3 5 65 135 470 280 140 10 30 60 45 15 3 4 –1.
0 –1.
5 85 190 Conditions Ratings min –30 –100 ±10 –2.
5 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, ...


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