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HY5N60

Part Number	HY5N60
Manufacturer	HOOYI
Description	600V N-Channel MOSFET
Published	Jul 2, 2015
Detailed Description	600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Techn...
Datasheet	HY5N60 PDF File

Overview

600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Excellent Gate Charge: 14nC(Typ) Extended Safe Operating Area Lower RDS(ON) : 2 Ω(Typ.
) @VGS =10V 100% Avalanche Tested HY5N60 BVDSS = 640 RDS(on) = 2 Ω ID = 5 A TO-220 1 23 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed ...

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