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STGP3NB60HDFP

STMicroelectronics
Part Number STGP3NB60HDFP
Manufacturer STMicroelectronics
Description N-CHANNEL PowerMESH IGBT
Published Jul 5, 2015
Detailed Description STGP3NB60HD ® STGP3NB60HDFP N-CHANNEL 3A - 600V TO-220/FP PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGP3NB60HD STGP3NB...
Datasheet PDF File STGP3NB60HDFP PDF File

STGP3NB60HDFP
STGP3NB60HDFP


Overview
STGP3NB60HD ® STGP3NB60HDFP N-CHANNEL 3A - 600V TO-220/FP PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGP3NB60HD STGP3NB60HDFP 600 V < 2.
8 V 600 V < 2.
8 V 3A 3A s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) s LOW ON-VOLTAGE DROP (Vcesat) s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s VERY HIGH FREQUENCY OPERATION s OFF LOSSES INCLUDE TAIL CURRENT s CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.
The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).
APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES 3 2 1 TO-220 3 2 1 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol P ar am e t er VCES Collector-Emitter Voltage (VGS = 0) VGE Gate-Emitter Voltage IC Collector Current (continuous) at Tc = 25 oC IC Collector Current (continuous) at Tc = 100 oC ICM(•) Collector Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor Ts tg Storage T emperature Tj Max.
O perating Junct ion T emperature (•) Pulse width limited by max.
junction temperature Va lue STG P7NB60HD STGP7NB60HDF P 600 600 ± 20 ± 20 66 33 24 24 70 35 0.
56 0.
28 -65 to 150 150 Unit V V A A A W W /o C oC oC June 1999 1/9 STGP3NB60HD/FP THERMAL DATA Rthj-case R th j -a mb Rthc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max Typ TO-220 T O-220FP 1.
78 3.
57 6 2.
5 0.
5 oC/W oC/W oC/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbol V BR(CES) ICES IGES Parameter Collector-Emitt er Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 µA VGE = 0 VCE = Max Rat ing VCE = Max Rat ing VGE = ± 20 V ...


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