DatasheetsPDF.com

STGP3NB60HD

ST Microelectronics
Part Number STGP3NB60HD
Manufacturer ST Microelectronics
Description N-CHANNEL IGBT
Published Sep 28, 2005
Detailed Description ® STGP3NB60HD STGP3NB60HDFP N-CHANNEL 3A - 600V TO-220/FP PowerMESH™ IGBT TYPE STGP3NB60HD STGP3NB60HDFP s V CES 600 ...
Datasheet PDF File STGP3NB60HD PDF File

STGP3NB60HD
STGP3NB60HD

Overview
® STGP3NB60HD STGP3NB60HDFP N-CHANNEL 3A - 600V TO-220/FP PowerMESH™ IGBT TYPE STGP3NB60HD STGP3NB60HDFP s V CES 600 V 600 V V CE(sat) < 2.
8 V < 2.
8 V IC 3 A 3 A s s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE 3 1 2 1 2 3 TO-220 TO-220FP DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.
The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).
APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V GE IC IC I CM ( • ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 oC Collector Current (continuous) at Tc = 100 oC Collector Current (pulsed) T otal Dissipation at T c = 25 oC Derating Factor Storage T emperature Max.
O perating Junct ion T emperature 600 ± 20 6 3 24 70 0.
56 -65 to 150 150 Value STG P7NB60HD STGP7NB60HDF P 600 ± 20 6 3 24 35 0.
28 V V A A A W W /o C o o Unit C C (•) Pulse width limited by max.
junction temperature June 1999 1/9 STGP3NB60HD/FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 1.
78 62.
5 0.
5 T O-220FP 3.
57 o o o C/W C/W C/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbol V BR(CES) I CES IGES Parameter Collector-Emitt er Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions I C = 250 µ A V GE = 0 T j = 25 oC T j = 125 o C V CE = 0 Min.
600 100 1000 ± ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)