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EN29F040A

EON
Part Number EN29F040A
Manufacturer EON
Description 4 Megabit (512K x 8-bit) Flash Memory
Published Jul 15, 2015
Detailed Description EN29F040A 4 Megabit (512K x 8-bit) Flash Memory EN29F040A FEATURES • 5.0V operation for read/write/erase operations • ...
Datasheet PDF File EN29F040A PDF File

EN29F040A
EN29F040A

Overview
EN29F040A 4 Megabit (512K x 8-bit) Flash Memory EN29F040A FEATURES • 5.
0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: - 8 uniform sectors of 64Kbytes each - Supports full chip erase - Individual sector erase supported - Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors • High performance program/erase speed - Byte program time: 10µs typical - Sector erase time: 500ms typical - Chip erase time: 3.
5s typical • Low Standby Current - 1µA CMOS standby current-typical - 1mA TTL standby current • Low Power Active Current - 30mA active read current - 30mA program/erase current • JEDEC Standard program and erase commands • JEDEC standard DATA polling and toggle bits feature • Single Sector and Chip Erase • Sector Unprotect Mode • Embedded Erase and Program Algorithms • Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode • 0.
23 µm triple-metal double-poly triple-well CMOS Flash Technology • Low Vcc write inhibit < 3.
2V • 100K endurance cycle • Package Options - 32-pin PDIP - 32-pin PLCC - 32-pin TSOP (Type 1) • Commercial and Industrial Temperature Ranges GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory.
Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each.
Any byte can be programmed typically in 10µs.
The EN29F040A features 5.
0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29F040A has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable ( W E ) controls, which eliminate bus contention issues.
This device is designed to allow either single (or multiple) Sector or full chip erase operation, where each Sector can be individually protected against program/er...


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