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EN29F040

ETC
Part Number EN29F040
Manufacturer ETC
Description 4 Megabit (512K x 8-bit) Flash Memory
Published Mar 30, 2005
Detailed Description EN29F040 EN29F040 4 Megabit (512K x 8-bit) Flash Memory FEATURES • 5.0V operation for read/write/erase operations • Fas...
Datasheet PDF File EN29F040 PDF File

EN29F040
EN29F040

Overview
EN29F040 EN29F040 4 Megabit (512K x 8-bit) Flash Memory FEATURES • 5.
0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: 8 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase supported Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Chip erase time: 3.
5s typical • JEDEC Standard program and erase commands • JEDEC standard DATA polling and toggle bits feature • Single Sector and Chip Erase • Sector Unprotect Mode • Embedded Erase and Program Algorithms • Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode • 0.
35 µm double-metal double-poly triple-well CMOS Flash Technology • Low Vcc write inhibit < 3.
2V • 100K endurance cycle • Package Options - 32-pin PDIP - 32-pin PLCC - 32-pin TSOP (Type...


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