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BLV640

Part Number	BLV640
Manufacturer	BELLING
Description	N-Channel Enhancement Mode Power MOSFET
Published	Jul 19, 2015
Detailed Description	BLV640 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requirement...
Datasheet	BLV640 PDF File

Overview

BLV640 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 200V 0.
18Ω 18A Description This advanced low voltage MOSFET is produced using Belling’s proprietary MOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) (Note 1) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note2) Avalanche Current Repetitive Avalanche Energy Operati...

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