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FS30KMJ-06

Mitsubishi Electric Semiconductor
Part Number FS30KMJ-06
Manufacturer Mitsubishi Electric Semiconductor
Description Nch POWER MOSFET
Published Mar 23, 2005
Detailed Description MITSUBISHI Nch POWER MOSFET FS2VS-14A HIGH-SPEED SWITCHING USE FS2VS-14A OUTLINE DRAWING r 1.5MAX. Dimensions in mm ...
Datasheet PDF File FS30KMJ-06 PDF File

FS30KMJ-06
FS30KMJ-06


Overview
MITSUBISHI Nch POWER MOSFET FS2VS-14A HIGH-SPEED SWITCHING USE FS2VS-14A OUTLINE DRAWING r 1.
5MAX.
Dimensions in mm 4.
5 1.
3 10.
5MAX.
1.
5MAX.
8.
6 ± 0.
3 9.
8 ± 0.
5 3.
0 –0.
5 +0.
3 0 +0.
3 –0 1 5 0.
8 0.
5 q w e wr 2.
6 ± 0.
4 q ¡VDSS .
.
700V ¡rDS (ON) (MAX) .
.
.
.
9.
75Ω ¡ID .
.
.
.
2A q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 700 ±30 2 6 65 –55 ~ +150 –55 ~ +150 1.
2 4.
5 Unit V V A A W °C °C g Feb.
1999 Typical value (1.
5) MITSUBISHI Nch POWER MOSFET FS2VS-14A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 700V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min.
700 ±30 — — 2 — — 0.
72 — — — — — — — — — Typ.
— — — — 3 7.
47 7.
47 1.
2 270 30 5 10 12 33 21 1.
0 — Max.
— — ±10 1 4 9.
75 9.
75 — — — — — — — — 1.
5 1.
92 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer ...


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