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FS30KMJ-3

Mitsubishi Electric Semiconductor
Part Number FS30KMJ-3
Manufacturer Mitsubishi Electric Semiconductor
Description Nch POWER MOSFET
Published Mar 23, 2005
Detailed Description MITSUBISHI Nch POWER MOSFET FS2VS-18A HIGH-SPEED SWITCHING USE FS2VS-18A OUTLINE DRAWING r Dimensions in mm 4.5 1.3 ...
Datasheet PDF File FS30KMJ-3 PDF File

FS30KMJ-3
FS30KMJ-3


Overview
MITSUBISHI Nch POWER MOSFET FS2VS-18A HIGH-SPEED SWITCHING USE FS2VS-18A OUTLINE DRAWING r Dimensions in mm 4.
5 1.
3 1.
5MAX.
8.
6 ± 0.
3 9.
8 ± 0.
5 3.
0 +0.
3 –0.
5 1.
5MAX.
10.
5MAX.
0 +0.
3 –0 1 5 0.
8 0.
5 q w e wr 2.
6 ± 0.
4 q ¡VDSS 900V ¡rDS (ON) (MAX) .
.
.
.
7.
3Ω ¡ID .
.
2A q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 900 ±30 2 6 85 –55 ~ +150 –55 ~ +150 1.
2 4.
5 Unit V V A A W °C °C g Feb.
1999 Typical value (1.
5) MITSUBISHI Nch POWER MOSFET FS2VS-18A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 900V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min.
900 ±30 — — 2 — — 1.
2 — — — — — — — — — Typ.
— — — — 3 5.
62 5.
62 2.
0 460 45 8 11 13 55 22 1.
0 — Max.
— — ±10 1 4 7.
30 7.
30 — — — — — — — — 1.
5 1.
47 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse...


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