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2SK211

Xiao sheng Elctronic
Part Number 2SK211
Manufacturer Xiao sheng Elctronic
Description N-channel MOSFET
Published Jul 28, 2015
Detailed Description Silicon N Channel Junction FETs LH03 series of products interconvertible 2SK211 Xiaosheng D Symbol Applications For ch...
Datasheet PDF File 2SK211 PDF File

2SK211
2SK211

Overview
Silicon N Channel Junction FETs LH03 series of products interconvertible 2SK211 Xiaosheng D Symbol Applications For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC, electronic switch.
SG Packag Electrical characteristics (Ta=25℃) 1-Drain 2-Gate 3-Source SOT-23 Parameter Symbl Conditions min typ max unit Drain to Source Voltage BVDS IDS= 1uA 20 V Gate to Drain ( Source) Voltage VGD(S) IGS= -1uA -20 V Gate to Source Cut-off Voltage VGS(off) VDS=10V IDS=1uA -0.
3 -2.
5 V Gate to Source Reverse Current IGSS VDS=0VVGS=- 10V -1.
0 nA Saturation Drain Current IDSS VDS=0V VGS=0V 1.
2 12 mA Forward transfer admittance |Yfs| VDS=10V VGS=0V 2.
5 mS f=1KC Classifications Marking Rank (LH) Marking Rank IDSS Classification (mA ) Y O 1.
2~3.
0 GR Y 2.
5~6.
5 BL GR 6.
0~12 YEAR ：2014 Xiao sheng Elctronic &Telechnology CO.
,LTD Tel / Fax : 86-021-54373695 WWW .
xiao sheng -sh .
Com Email : xiao sheng _sh @126 .
com No .
1021 xin zhu Rd .
Min hang .
Shang hai China ...


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