DatasheetsPDF.com

C2715

Part Number	C2715
Manufacturer	GME
Description	Silicon Epitaxial Planar Transistor
Published	Aug 12, 2015
Detailed Description	Silicon Epitaxial Planar Transistor FEATURES z High power gain z Recommended for FM IF,OSC stage and AM CONV.IF stage ...
Datasheet	C2715 PDF File

Overview

Silicon Epitaxial Planar Transistor FEATURES z High power gain z Recommended for FM IF,OSC stage and AM CONV.
IF stage Pb Lead-free APPLICATIONS z High Frequency Amplifier Applications Production specification 2SC2715 ORDERING INFORMATION Type No.
Marking 2SC2715 RR1/RO1/RY1 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 35 VCEO Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 4 IC Collector Current -Continuous 50 IB Base current 10 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +125 Units V V V mA mA mW ℃ C099 Rev.
A www.
gmicroelec.
com 1 Pro...

Similar Datasheet

C2703 2SC2703 - Toshiba
C2705 2SC2705 - Toshiba Semiconductor
C2710 2SC2710 - Toshiba
C2712 Silicon NPN Transistors - Toshiba
C2712 2SC2712 - Weitron Technology
C2712 NPN EPITAXIAL SILICON TRANSISTOR - WEJ
C2713 2SC2713 - Toshiba
C2714 2SC2714 - Toshiba
C2715 Silicon Epitaxial Planar Transistor - GME
C2717 2SC2717 - Toshiba

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)