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C2712

WEJ
Part Number C2712
Manufacturer WEJ
Description NPN EPITAXIAL SILICON TRANSISTOR
Published Aug 12, 2015
Detailed Description NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER High Current Gain Bandwidth Product ...
Datasheet PDF File C2712 PDF File

C2712
C2712

Overview
NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER High Current Gain Bandwidth Product fT=600MHz 2SC2715 SOT-23 1 1.
2.
4 1.
3 3 2 1.
BASE 2.
EMITTER 3.
COLLECTOR 2.
9 1.
9 0.
95 0.
95 0.
4 Unit:mm ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Ta=25oC* Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Ic PD Tj Tstg Rating 30 15 5 50 225 150 -55~150 (Ta=25 oC) Unit V V V mA mW OC OC Electrical Characteristics (Ta=25 oC) Parameter Symbol MIN.
TYP.
MAX.
Unit Condition Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage# Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Capacitance Collector-Gain-Bandwidth Product BVCBO BVCEO BVEBO ICBO IEBO HFE VCE(sat) Cob fT 30 15 5 28 100 1.
3 700 1100 50 50 300 0.
5 1.
7 V V V nA nA V PF MHz IC=100 A IE=0 IC=1mA IB=0 IE=100 A IC=0 VCB=12V, VE=0 VCB=3V, IC=0 VCB=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=10,f=1MHz VCE=5V, IC=5mA *Total Device Dissipation:FR=1X0.
75X0.
062 in Board Derate 25oC # Pulse Test: Pulse Width 300uS Duty cycle 2% DEVICE MARKING: 2SC2715=J8 ...


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