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EDW2032BBBG

Micron
Part Number EDW2032BBBG
Manufacturer Micron
Description GDDR5 SGRAM
Published Aug 13, 2015
Detailed Description 2Gb: x16, x32 GDDR5 SGRAM Features GDDR5 SGRAM EDW2032BBBG – 4 Meg x 32 I/O x 16 banks, 8 Meg x 16 I/O x 16 banks Featu...
Datasheet PDF File EDW2032BBBG PDF File

EDW2032BBBG
EDW2032BBBG


Overview
2Gb: x16, x32 GDDR5 SGRAM Features GDDR5 SGRAM EDW2032BBBG – 4 Meg x 32 I/O x 16 banks, 8 Meg x 16 I/O x 16 banks Features • VDD = VDDQ = 1.
6V/1.
5V ±3% and 1.
35V ±3% • Data rate: 5.
0 Gb/s, 6.
0 Gb/s, 7.
0 Gb/s (MAX) • 16 internal banks • Four bank groups for tCCDL = 3 tCK • 8n-bit prefetch architecture: 256-bit per array read or write access for x32; 128-bit for x16 • Burst length (BL): 8 only • Programmable CAS latency: 6–22 • Programmable WRITE latency: 3–7 • Programmable CRC READ latency: 1–3 • Programmable CRC WRITE latency: 8–14 • Programmable EDC hold pattern for CDR • Precharge: Auto option for each burst access • Auto refresh and self refresh modes • Refresh cycles: 16,384 cycles/32ms • Interface: Pseudo open drain (POD-15) compatible outputs: 40Ω pull-down, 60Ω pull-up • On-die termination (ODT): 60Ω or 120Ω (NOM) • ODT and output driver strength auto calibration with external resistor ZQ pin: 120Ω • Programmable termination and driver strength off- sets • Selectable external o...



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