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FDS6673BZ_F085

Fairchild Semiconductor
Part Number FDS6673BZ_F085
Manufacturer Fairchild Semiconductor
Description P-Channel PowerTrench MOSFET
Published Aug 15, 2015
Detailed Description FDS6673BZ_F085 P-Channel PowerTrench® MOSFET PFD-CSh6a6n7n3eBlZP_oFw08e5rTrench® MOSFET -30V, -14.5A, 7.8mΩ July 2009 ...
Datasheet PDF File FDS6673BZ_F085 PDF File

FDS6673BZ_F085
FDS6673BZ_F085

Overview
FDS6673BZ_F085 P-Channel PowerTrench® MOSFET PFD-CSh6a6n7n3eBlZP_oFw08e5rTrench® MOSFET -30V, -14.
5A, 7.
8mΩ July 2009 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features „ Max rDS(on) = 7.
8mΩ, VGS = -10V, ID = -14.
5A „ Max rDS(on) = 12mΩ, VGS = -4.
5V, ID = -12A „ Extended VGS range (-25V) for battery applications „ HBM ESD protection level of 6.
5kV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS compliant „ Qualified to AEC Q101 DD D D SO-8 S SSG 5 6 7 8 4 3 2 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current -Conti...


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