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NP80N04PDG

Renesas
Part Number NP80N04PDG
Manufacturer Renesas
Description N-CHANNEL POWER MOS FET
Published Aug 24, 2015
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04MDG, NP80N04NDG, NP80N04PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION...
Datasheet PDF File NP80N04PDG PDF File

NP80N04PDG
NP80N04PDG

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04MDG, NP80N04NDG, NP80N04PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION PART NUMBER NP80N04MDG-S18-AY Note NP80N04NDG-S18-AY Note NP80N04PDG-E1B-AY Note NP80N04PDG-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Tape 1000 p/reel Note Pb-free (This product does not contain Pb in the external electrode.
) PACKAGE TO-220 (MP-25K) typ.
1.
9 g TO-262 (MP-25SK) typ.
1.
8 g TO-263 (MP-25ZP) typ.
1.
5 g FEATURES • Logic level • Super low on-state resistance - NP80N04MDG, NP80N04NDG RDS(on)1 = 4.
8 mΩ MAX.
(VGS = 10 V, ID = 40 A) RDS(on)2 = 9.
0 mΩ MAX.
(VGS = 4.
5 V, ID = 35 A) - NP80N04PDG RDS(on)1 = 4.
5 mΩ MAX.
(VGS = 10 V, ID = 40 A) RDS(on)2 = 8.
7 mΩ MAX.
(VGS = 4.
5 V, ID = 35 A) • High current rating ID(DC) = ±80 A • Low input capacitance Ciss = 4600 pF TYP.
• Designed for automotive application and AEC-Q101 qualified (TO-220) (TO-262) (TO-263) The information in this document is subject to change without notice.
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Document No.
D19795EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in Japan 2009 NP80N04MDG, NP80N04NDG, NP80N04PDG ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Note2 Tstg IAR EAR 40 ±20 ±80 ±300 115 1.
8 175 −55 to +175 37 137 V V A A W W °C °C A ...


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