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NP80N04PUG

Renesas
Part Number NP80N04PUG
Manufacturer Renesas
Description N-CHANNEL POWER MOS FET
Published Aug 27, 2015
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04NUG, NP80N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP80N04...
Datasheet PDF File NP80N04PUG PDF File

NP80N04PUG
NP80N04PUG

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04NUG, NP80N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP80N04NUG and NP80N04PUG are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP80N04NUG-S18-AY Note NP80N04PUG-E1B-AY Note NP80N04PUG-E2B-AY Note Pure Sn (Tin) Tube 50 p/tube Tape 1000 p/reel Note Pb-free (This product does not contain Pb in the external electrode.
) PACKAGE TO-262 (MP-25SK) typ.
1.
8 g TO-263 (MP-25ZP) typ.
1.
5 g FEATURES • Non logic level • Super low on-state resistance - NP80N04NUG RDS(on) = 4.
8 mΩ MAX.
(VGS = 10 V, ID = 40 A) - NP80N04PUG RDS(on) = 4.
5 mΩ MAX.
(VGS = 10 V, ID = 40 A) • High current rating ID(DC) = ±80 A • Low input capacitance Ciss = 4900 pF TYP.
• Designed for automotive application and AEC-Q101 qualified (TO-262) (TO-263) The information in this document is subject to change without notice.
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Document No.
D19799EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in Japan 2009 NP80N04NUG, NP80N04PUG ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Note2 Tstg IAR EAR 40 ±20 ±80 ±300 115 1.
8 175 −55 to +175 37 137 V V A A W W °C °C A mJ Notes 1.
PW ≤ 10 μs, Duty Cycle ≤ 1% 2.
Tch ≤ 150°C, RG = 25 Ω THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.
30 83.
3 °C/W °...


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