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KF7N50D

KEC
Part Number KF7N50D
Manufacturer KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published Aug 29, 2015
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast swit...
Datasheet PDF File KF7N50D PDF File

KF7N50D
KF7N50D


Overview
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS(Min.
)= 500V, ID= 5.
5A RDS(ON)=1.
0 (Max) @VGS =10V Qg(typ.
) =16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID IDP EAS EAR dv/dt PD RATING KF7N50D/I 500 30 5.
5 3.
5 21 180 4 4.
5 69.
4 0.
56 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 150 Thermal Resistance, Junction-to-Case RthJC Thermal Resistance, Junction-toAmbient RthJA * : Drain current limited by maximum junction temperature.
1.
8 110 PIN CONNECTION D www.
ckb-sh.
com UNIT V V A mJ mJ V/ns W W/ /W /W KF7N50D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF7N50D A CD H G FF B J E K L N M DIM MILLIMETERS A 6.
60 +_ 0.
20 B 6.
10 +_ 0.
20 C 5.
34 +_ 0.
30 D 0.
70 +_ 0.
20 E 2.
70 +_ 0.
15 F 2.
30 +_ 0.
10 G 0.
96 MAX H 0.
90 MAX J 1.
80 +_0.
20 K 2.
30 +_0.
10 L 0.
50 +_ 0.
10 M 0.
50 +_ 0.
10 N 0.
70 MIN O 0.
1 MAX 1 23 O 1.
GATE 2.
DRAIN 3.
SOURCE DPAK (1) KF7N50I AH CJ BD M N G FF 123 K E P L 1.
GATE 2.
DRAIN 3.
SOURCE DIM A B C D E F G H J K L M N P MILLIMETERS 6.
6 +_ 0.
2 6.
1 +_ 0.
2 5.
34 +_0.
3 0.
7 +_ 0.
2 9.
3 +_0.
3 2.
3+_ 0.
2 0.
76 +_ 0.
1 2.
3 +_0.
1 0.
5+_ 0.
1 1.
8 +_ 0.
2 0.
5 +_ 0.
1 1.
0 +_ 0.
1 0.
96 MAX 1.
02 +_ 0.
3 IPAK(1) G S 2011.
10 .
4 Revision No : 0 1/6 KF7N50D/I ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current BVDSS ID=250 A, VGS=0V BVDSS/ Tj ID=250 A, Referenced to 25 ...


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