DatasheetsPDF.com

KF7N50P


Part Number KF7N50P
Manufacturer KEC
Title N CHANNEL MOS FIELD EFFECT TRANSISTOR
Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche char...
Features VDSS(Min.)= 500V, ID= 7A RDS(ON)=1.0 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/...

File Size 1.19MB
Datasheet KF7N50P PDF File








Similar Ai Datasheet

KF7N50D : This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V, ID= 5.5A RDS(ON)=1.0 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID IDP EAS EAR dv/dt PD RATING KF7N50D/I 500 30 5.5 3.5 21 180 4 4.5 69.

KF7N50F : This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V, ID= 7A RDS(ON)=1.0 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 SYMBOL VDSS VGSS ID RATING KF7N50P KF7N50F 500 30 7 7* 4.4 4.4* IDP 21 21* EAS 180 EAR .

KF7N50I : This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V, ID= 5.5A RDS(ON)=1.0 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID IDP EAS EAR dv/dt PD RATING KF7N50D/I 500 30 5.5 3.5 21 180 4 4.5 69.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)