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CEM4042

Chino-Excel Technology
Part Number CEM4042
Manufacturer Chino-Excel Technology
Description N-Channel Enhancement Mode Field Effect Transistor
Published Sep 2, 2015
Detailed Description CEM4042 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 40V, 18A, RDS(ON) = 5.1mΩ @VGS = 10V....
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CEM4042
CEM4042

Overview
CEM4042 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 40V, 18A, RDS(ON) = 5.
1mΩ @VGS = 10V.
RDS(ON) = 7.
5mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 40 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 18 IDM 72 Maximum Power Dissipation PD 2.
5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units V V A A W C Units C/W This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 1.
2010.
Oct http://www.
cet-mos.
com Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Symbol Test Condition BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) VGS = 0V, ID = 250µA VDS = 40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 10A VGS = 4.
5V, ID = 8A Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 15V, VGS = 0V, f = 1.
0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time td(on) tr td(off) tf VDD = 15V, ID = 15A, VGS = 4.
5V, RGEN = 1.
8Ω Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 15V, ID = 15A, VGS = 4.
5V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b IS VSD VGS ...


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