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CEM4052

Chino-Excel Technology
Part Number CEM4052
Manufacturer Chino-Excel Technology
Description N-Channel Enhancement Mode Field Effect Transistor
Published Sep 2, 2015
Detailed Description CEM4052 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 16A, RDS(ON) = 6.6mΩ @VGS = 10V. RDS(ON) = 10m...
Datasheet PDF File CEM4052 PDF File

CEM4052
CEM4052

Overview
CEM4052 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 16A, RDS(ON) = 6.
6mΩ @VGS = 10V.
RDS(ON) = 10mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 40 VGS ±20 ID 16 IDM 64 Maximum Power Dissipation PD 2.
5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units V V A A W C Units C/W Details are subject to change without notice .
1 Rev 1.
2010.
Nov http://www.
cet-mos.
com CEM4052 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 40 1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID =10A VGS = 4.
5V, ID =8A 1 3V 5.
2 6.
6 mΩ 7.
3 10 mΩ Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Ciss Coss Crss VDS = 15V, VGS = 0V, f = 1.
0 MHz 3070 385 285 pF pF pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 15V, ID = 16A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forwa...


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