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2N5495

INCHANGE
Part Number 2N5495
Manufacturer INCHANGE
Description Silicon NPN Power Transistor
Published Sep 3, 2015
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5495 DESCRIPTION ·Collector-Emitte...
Datasheet PDF File 2N5495 PDF File

2N5495
2N5495

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5495 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) ·Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 3A APPLICATIONS ·Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO VCEV VCER VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.
5V Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage 60 60 50 40 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 7 IB Base Current Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 1.
8 50 150 Tstg Storage Temperature Range -65~150 UNIT V V V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2.
5 ℃/W 70 ℃/W isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5495 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 VCER(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; RBE= 100Ω VCEV(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; VBE= -1.
5V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.
3A VBE(on) Base-Emitter On Voltage ICEV Collector Cutoff Current ICER Collector Cutoff Current IEBO Emitter Cutoff Current IC= 3A ; VCE= 4V VCE= 55V; VBE= -1.
5V VCE= 55V; VBE= -1.
5V;TC= 125℃ VCE= 40V; RBE= 100Ω VCE= 40V; RBE= 100Ω; TC= 125℃ VEB= 5V; IC= 0 hFE DC Current Gain IC= 3A ; VCE= 4V fT Current-Gain—Bandwidth Product IC= 0.
5A ; VCE= 4V Switching Times ton Turn-On Time toff Turn-Off Time IC= 3A; IB1= -IB2= 0.
3A MIN MAX UNIT 40 V 50 V ...


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