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SI2302

YANGJING
Part Number SI2302
Manufacturer YANGJING
Description N-channel MOSFET
Published Sep 12, 2015
Detailed Description SHENZHEN YANGJING MICROELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2302 N-Channel 20-V(D-S) MOSFET FEATURE...
Datasheet PDF File SI2302 PDF File

SI2302
SI2302

Overview
SHENZHEN YANGJING MICROELECTRONICS CO.
,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2302 N-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: A2SHB SOT-23 1.
GATE 2.
SOURCE 3.
DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source-Drain Current(Diode Conduction) Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature Symbol VDS VGS ID IS PD RθJA TJ TSTG Value 20 ±8 2.
1 0.
6 0.
35 357 150 -55 ~+150 Unit V A W ℃/W ℃ YANGJING MICROELECTRONICS www.
szyangjing.
com 4007-888-606 2 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Static Drain-source breakdown voltage Gate-threshold voltage Gate-body leakage Zero gate voltage drain current Drain-source on-resistancea Forward transconductancea V(BR)DSS VGS(th) IGSS IDSS rDS(on) gfs VGS = 0V, ID =10µA VDS =VGS, ID =50µA VDS =0V, VGS =±8V VDS =20V, VGS =0V VGS =4.
5V, ID =3.
6A VGS =2.
5V, ID =3.
1A VDS =5V, ID =3.
6A Diode forward voltage VSD IS=0.
94A,VGS=0V Dynamic Total gate charge Gate-source charge Gate-drain charge Input capacitance b Output capacitance b Reverse transfer capacitanceb Switchingb Qg Qgs Qgd Ciss Coss Crss VDS =10V,VGS =4.
5V,ID =3.
6A VDS =10V,VGS =0V,f=1MHz Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf VDD=10V, RL=5.
5Ω, ID ≈3.
6A, VGEN=4.
5V,Rg=6Ω Notes : a.
Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
b.
These parameters have no way to verify.
Min Typ Max Units 20 0.
65 0.
95 1.
2 ±100 1 0.
045 0.
060 0.
070 0.
115 8 0.
76 1.
2 V nA µA Ω S V 4.
0 10 0.
65 nC 1.
5 300 120 pF 80 7 15 55 80 ns 16 60 10 25 YANGJING MICROELECTRONICS www.
szyangjing.
com 4007-888-606 2 Typical Characteristics SI2302 DRAIN CURRENT I (A) D Output Characteristics 15 V =3.
5V,3.
0V,2.
5V GS V =2.
0V GS 12 T =25℃ a Pulsed 9 6 ...


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