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CEP730G

CET
Part Number CEP730G
Manufacturer CET
Description N-Channel MOSFET
Published Sep 22, 2015
Detailed Description CEP730G/CEB730G CEF730G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP730G CEB730...
Datasheet PDF File CEP730G PDF File

CEP730G
CEP730G

Overview
CEP730G/CEB730G CEF730G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP730G CEB730G VDSS 400V 400V CEF730G 400V RDS(ON) 1Ω 1Ω 1Ω ID 5.
5A 5.
5A 5.
5A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS 400 VGS ±30 ID 5.
5 5.
5 e IDM f 22 22 e 83 41 PD 0.
66 0.
32 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
5 62.
5 2.
5 65 Units V V A A W W/ C C Units ...


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