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CEP07N65

CET
Part Number CEP07N65
Manufacturer CET
Description N-Channel MOSFET
Published Sep 29, 2015
Detailed Description CEP07N65/CEB07N65 CEF07N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP07N65 V...
Datasheet PDF File CEP07N65 PDF File

CEP07N65
CEP07N65

Overview
CEP07N65/CEB07N65 CEF07N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP07N65 VDSS 650V RDS(ON) 1.
3Ω ID 7A @VGS 10V CEB07N65 650V 1.
3Ω 7A 10V CEF07N65 650V 1.
3Ω 7A d 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 650 ±30 7 28 166 1.
3 7d 28d 50 0.
4 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.
75 62.
5 2.
5 65 Units V V A A W W/ C C Units C/W C/W This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 3.
2012.
Mar.
http://www.
cet-mos.
com CEP07N65/CEB07N65 CEF07N65 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 5A Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.
0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 300V, ID =7A, VGS = 10V, RGEN = 25Ω Turn-Off F...


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