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CEP07N7

CET
Part Number CEP07N7
Manufacturer CET
Description N-Channel MOSFET
Published Sep 29, 2015
Detailed Description CEP07N7/CEB07N7 CEF07N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP07N7 CEB07N7 CEF07N7 VDSS...
Datasheet PDF File CEP07N7 PDF File

CEP07N7
CEP07N7

Overview
CEP07N7/CEB07N7 CEF07N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP07N7 CEB07N7 CEF07N7 VDSS 700V 700V 700V RDS(ON) 1.
5Ω 1.
5Ω 1.
5Ω ID 6.
6A 6.
6A 6.
6A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 700 ±30 6.
6 26.
4 166 1.
3 6.
6d 26.
4d 50 0.
4 Repetitive Avalanche Energy EAR 3.
6 Single Pulsed Avalanche Energy h Operating and Store Temperature Range EAS TJ,Tstg 38.
88 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.
75 62.
5 2.
5 65 Units V V A A W W/ C mJ mJ C Units C/W C/W Details are subject to change without notice .
1 Rev 4.
2012.
Nov http://www.
cet-mos.
com CEP07N7/CEB07N7 CEF07N7 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS =700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 3.
5A Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.
0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 300V, ID =6.
6A, VGS = 10V, RGEN = 25Ω Turn-Of...


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