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ME20N10-G

Part Number	ME20N10-G
Manufacturer	Matsuki
Description	N-Channel 100V (D-S) MOSFET
Published	Sep 29, 2015
Detailed Description	ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME20N10 is the N-Channel logic enhancement mode...
Datasheet	ME20N10-G PDF File

Overview

ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION FEATURES ● RDS(ON)≦78mΩ@VGS=10V ● RDS(ON)≦98mΩ@VGS=5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO-252-3L) Top View e Ordering Information: ME20N10 (Pb-free) ME20N10-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Note...

Similar Datasheet

ME20N10 N-Channel 100V (D-S) MOSFET - Matsuki
ME20N10-G N-Channel 100V (D-S) MOSFET - Matsuki

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