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ME20N10

Matsuki
Part Number ME20N10
Manufacturer Matsuki
Description N-Channel 100V (D-S) MOSFET
Published Sep 29, 2015
Detailed Description ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME20N10 is the N-Channel logic enhancement mode...
Datasheet PDF File ME20N10 PDF File

ME20N10
ME20N10

Overview
ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION FEATURES ● RDS(ON)≦78mΩ@VGS=10V ● RDS(ON)≦98mΩ@VGS=5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO-252-3L) Top View e Ordering Information: ME20N10 (Pb-free) ME20N10-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation* TC=25℃ TC=70℃ Operating Junction Temperature Thermal Resistance-Junction to Case* *The device mounted on 1in2 FR4 board with 2 oz copper Symbol VDS VGS ID IDM PD TJ RθJC Maximum Ratings 100 ±20 19 15 76 45 29 -55 to 150 2.
8 Unit V V A A W ℃ ℃/W Jul, 2012-Ver1.
4 01 ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFET Electrical Characteristics (TC =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min Typ Max Unit STATIC V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VGS=0V, ID=250μA VDS=VGS, ID=250μA 100 V 1 2.
5 V IGSS Gate Leakage Current VDS=0V, VGS=±20V IDSS Zero Gate Voltage Drain Current VDS=80V, VGS=0V ±100 1 nA μA RDS(ON) Drain-Source On-State Resistancea VGS=10V, ID= 12A VGS=5V, ID= 12A 65 78 mΩ 75 98 VSD Diode Forward Voltage IS=12A, VGS=0V 1.
3 V DYNAMIC Qg Total Gate Cha...


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