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FSYA250R

Intersil Corporation
Part Number FSYA250R
Manufacturer Intersil Corporation
Description 27A/ 200V/ 0.100 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
Published Mar 23, 2005
Detailed Description FSYA250D, FSYA250R June 1998 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Di...
Datasheet PDF File FSYA250R PDF File

FSYA250R
FSYA250R

Overview
FSYA250D, FSYA250R June 1998 27A, 200V, 0.
100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure.
It is specially designed and processed to be...


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