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FSYA254R

Intersil Corporation
Part Number FSYA254R
Manufacturer Intersil Corporation
Description Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Published Mar 23, 2005
Detailed Description FSYA254D, FSYA254R Data Sheet March 1999 File Number 4677 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Th...
Datasheet PDF File FSYA254R PDF File

FSYA254R
FSYA254R

Overview
FSYA254D, FSYA254R Data Sheet March 1999 File Number 4677 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure.
It is specially designed and processed to be radiatio...


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