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WFF630

Winsemi
Part Number WFF630
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Oct 12, 2015
Detailed Description WFF630 Silicon N-Channel MOSFET Features ■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 22nC) ■ ...
Datasheet PDF File WFF630 PDF File

WFF630
WFF630

Overview
WFF630 Silicon N-Channel MOSFET Features ■ 9A, 200V, RDS(on)(Max 0.
4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 22nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for soldering purposes (Note1) (Note 2) (Note 1) (Note 3) Value 200 9 5.
7 36 ±30 160 7.
2 5.
5 40 0.
35 -55~150 300 Units V A A A V mJ mJ V/ns W W/℃ ℃ ℃ Thermal Characteristics Symbol Parameter RQJC RQCS RQJA Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Value Min Typ Max - - 3.
12 - 0.
5 - - - 62.
5 Units ℃/W ℃/W ℃/W Rev, A Jun.
2010 Copyright@Winsemi Microelectronics Co.
, Ltd.
, All right reserved.
T01-3 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition WFF630 Min Type Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA Gate−source breakdown voltage Drain cut−off current V(BR)GSS IDSS IG = ±10 μA, VDS = 0 V VDS = 200 V, VGS = 0 V ±30 - - V - - 10 μA Drain−source breakdown voltage Break Voltage Temperature Coefficient V(BR)DSS ΔBVDSS/ ΔTJ ID = 250 μA, VGS = 0 V ID=250μA, Referenced to 25℃ 200 - 0.
2 -V - V/℃ Gate th...


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