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ECH8315

ON Semiconductor
Part Number ECH8315
Manufacturer ON Semiconductor
Description Power MOSFET
Published Oct 30, 2015
Detailed Description ECH8315 Power MOSFET –30V, 25mΩ, –7.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench ...
Datasheet PDF File ECH8315 PDF File

ECH8315
ECH8315

Overview
ECH8315 Power MOSFET –30V, 25mΩ, –7.
5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance.
This devices is suitable for applications with low on resistance requirements.
Features  Low On-Resistance  4V drive  ESD Diode-Protected Gate  Pb-Free, Halogen Free and RoHS compliance Typical Applications  Load Switch  Protection Switch for Lithium-ion Battery  Motor Driver SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS 20 V Drain Current (DC) ID 7.
5 A Drain Current (Pulse) PW  10s, duty cycle  1% IDP 40 A Power Dissipation When mounted on ceramic substrate (900mm2  0.
8mm) PD 1.
5 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate (900mm2  0.
8mm) Symbol RJA Value Unit 83.
3 C/W www.
onsemi.
com VDSS 30V RDS(on) Max 25mΩ@ 10V 44mΩ@ 4.
5V 49mΩ@ 4V ID Max 7.
5A ELECTRICAL CONNECTION P-Channel 87 6 5 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 12 3 4 PACKING TYPE : TL TL MARKING JS Lot No.
ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015 April 2015 - Rev.
2 1 Publication Order Number : ECH8315/D ECH8315 ELECTRICAL CHARACTERISTICS at Ta  25C (Note 2) Parameter Symbol Conditions Value Unit min typ max Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static D...


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