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RP1E090RP

Rohm
Part Number RP1E090RP
Manufacturer Rohm
Description 4V Drive Pch MOSFET
Published Nov 5, 2015
Detailed Description 4V Drive Pch MOSFET RP1E090RP  Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Prote...
Datasheet PDF File RP1E090RP PDF File

RP1E090RP
RP1E090RP

Overview
4V Drive Pch MOSFET RP1E090RP  Structure Silicon P-channel MOSFET Features 1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
 Dimensions (Unit : mm) MPT6 (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E090RP Taping TR 1000   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg 30 20 9 36 1.
6 36 2.
0 150 55 to +150 *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
Unit V V A A A A W C C  Inner circuit (6) (5) (4) (1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board.
Symbol Limits Rth (ch-a)* 62.
5 Unit C / W www.
rohm.
com ©2010 ROHM Co.
, Ltd.
All rights reserved.
1/5 2010.
06 - Rev.
A RP1E090RP  Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage IGSS V(BR)DSS IDSS VGS (th) Static drain-source on-state resistance RDS * (on) Min.
- 30 - 1.
0 - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * 10 - 　 Typ.
13 18 21 - 3000 360 360 20 30 135 80 30 7 11 Max.
10 1 2.
5 16.
9 25.
2 29.
4 - Unit Conditions A VGS=±20V, VDS=0V V ID=1mA, VGS=0V A VDS=30V, VGS=0V V VDS=10V, ID=1mA ID=9A, VGS=10V m ID=9A, VGS=4.
5V ID=9A, VGS=4.
0V S ID=9A, VDS=10V pF VDS=10V pF VGS...


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