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RP1E090XN

Rohm
Part Number RP1E090XN
Manufacturer Rohm
Description N-Channel MOSFET
Published Jan 12, 2016
Detailed Description Data Sheet 4V Drive Nch MOSFET RP1E090XN  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-...
Datasheet PDF File RP1E090XN PDF File

RP1E090XN
RP1E090XN

Overview
Data Sheet 4V Drive Nch MOSFET RP1E090XN  Structure Silicon N-channel MOSFET Features 1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
 Dimensions (Unit : mm) MPT6 (Single) (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E090XN Taping TR 1000   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS 30 VGSS 20 ID 9 IDP *1 36 IS 1.
6 ISP *1 36 PD *2 2.
0 Tch 150 Tstg 55 to 150 *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
Unit V V A A A A W C C  Inner circuit (6) (5) (4) (1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Thermal resistance Paramet...


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