DatasheetsPDF.com

K1930

Toshiba Semiconductor
Part Number K1930
Manufacturer Toshiba Semiconductor
Description 2SK1930
Published Nov 6, 2015
Detailed Description 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1930 Chopper Regulator, DC−DC Convert...
Datasheet PDF File K1930 PDF File

K1930
K1930

Overview
2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.
5) 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 3.
0 Ω (typ.
) l High forward transfer admittance : |Yfs| = 2.
0 S (typ.
) l Low leakage current : IDSS = 300 µA (max) (VDS = 800 V) l Enhancement−mode : Vth = 1.
5~3.
5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)