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K1918

Hitachi
Part Number K1918
Manufacturer Hitachi
Description Silicon N-Channel MOSFET
Published Nov 20, 2015
Detailed Description 2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • ...
Datasheet PDF File K1918 PDF File

K1918
K1918

Overview
2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter • Avalanche ratings Outline LDPAK 4 4 123 D 12 3 G S 1.
Gate 2.
Drain 3.
Source 4.
Drain November 1996 2SK1918(L), 2SK1918(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤1 % 2.
Value at Tc = 25 °C 3.
Value at Tch = 25 °C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I *1 D(pulse) IDR IAP*3 EAR*3 Pch*2 Tch Tstg Ratings 60 ±20 25 100 25 25 53 50 150 –55 to +150 Unit V V A A A A mJ W °C °C 2 2SK1918(L), 2SK1918(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to...


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