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C5886

Toshiba Semiconductor
Part Number C5886
Manufacturer Toshiba Semiconductor
Description 2SC5886
Published Nov 21, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications 2SC...
Datasheet PDF File C5886 PDF File

C5886
C5886

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications 2SC5886 Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.
5 A) • Low collector-emitter saturation: VCE (sat) = 0.
22 V (max) • High-speed switching: tf = 55 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg 100 V 80 V 50 7 V 5 A 10 0.
5 A 1 W 20 150 °C −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.
36 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating ...


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