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BC817-25

Taiwan Semiconductor
Part Number BC817-25
Manufacturer Taiwan Semiconductor
Description NPN Small Signal Transistor
Published Dec 1, 2015
Detailed Description BC817-16/-25/-40 Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES ● Low power loss, high efficiency ● I...
Datasheet PDF File BC817-25 PDF File

BC817-25
BC817-25

Overview
BC817-16/-25/-40 Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES ● Low power loss, high efficiency ● Ideal for automated placement ● High surge current capability ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● Lighting application ● On-board DC/DC converter MECHANICAL DATA ● Case: SOT-23 ● Molding compound meets UL 94 V-0 flammability rating ● Moisture sensitivity level: level 1, per J-STD-020 ● Packing code with suffix "G" means green compound (halogen-free) ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Weight: 8mg (approximately) KEY PARAMETERS PARAMETER VALUE UNIT VCBO VCEO VEBO IC hFE Package 50 V 45 V 5 V 500 mA 250-600 SOT-23 Configuration Single Dice ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER BC817- BC817- BC817- SYMBOL UNIT 16 25 40 Marking code on the device 6A 6B 6C Power dissipation Collector-base voltage, emitter open IC = 10 μA, IE = 0 PD VCBO 300 mW 50 V Collector-emitter voltage, base open IC = 10 mA, IB = 0 VCEO 45 V Emitter-base voltage, collector open IE = 1 μA, IC = 0 VEBO 5 V Collector current, dc IC 500 mA Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version:J1702 BC817-16/-25/-40 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN Collector cutoff current, emitter open Emitter cutoff current, collector open VCB = 45 V, IE = 0 VEB = 4 V, IC = 0 ICBO - IEBO - DC current gain BC817-16 100 VCE = 1 V, IC = 100 mA BC817-25 hFE 160 BC817-40 250 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCE = 5 V , IC = 10 mA, f= 100MHz VCE(sat) VBE(sat) fT 100 TYP -...


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