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QM2601S

UBIQ
Part Number QM2601S
Manufacturer UBIQ
Description N-Ch and P-Ch Fast Switching MOSFETs
Published Dec 21, 2015
Detailed Description QM2601S N-Ch and P-Ch Fast Switching MOSFETs General Description The QM2601S is the highest performance trench N-ch and...
Datasheet PDF File QM2601S PDF File

QM2601S
QM2601S

Overview
QM2601S N-Ch and P-Ch Fast Switching MOSFETs General Description The QM2601S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
The QM2601S meet the RoHS and Green Product requirement with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 20V -20V RDSON 18mΩ 50mΩ ID 7.
2A -4.
5A Applications z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Dual SOP8 Pin Configuration D1 D1 D2 D2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.
5V1 Continuous Drain Current, VGS @ 4.
5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range S1 G1S2 G2 Rating N-Ch P-Ch 20 -20 ±12 ±12 7.
2 -4.
5 5.
8 -3.
6 35 -23 1.
5 1.
5 -55 to 150 -55 to 150 -55 to 150 -55 to 150 Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Typ.
----- Max.
85 25 Units V V A A A W ℃ ℃ Unit ℃/W ℃/W Rev A.
03 D052011 1 QM2601S N-Ch and P-Ch Fast Switching MOSFETs N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.
5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Ris...


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