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QM0007G

UBIQ
Part Number QM0007G
Manufacturer UBIQ
Description P-Ch 100V Fast Switching MOSFETs
Published Dec 21, 2015
Detailed Description QM0007G P-Ch 100V Fast Switching MOSFETs General Description The QM0007G is the highest performance trench P-ch MOSFETs...
Datasheet PDF File QM0007G PDF File

QM0007G
QM0007G

Overview
QM0007G P-Ch 100V Fast Switching MOSFETs General Description The QM0007G is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
The QM0007G meet the RoHS and Green Product requirement with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS -100V RDSON 0.
65Ω ID -1.
5A Applications z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch SOT223 Pin Configuration D Absolute Maximum Ratings S GD Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Rating -100 ±20 -1.
5 -1.
2 -4.
5 1.
5 -55 to 150 -55 to 150 Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Typ.
----- Max.
85 36 Units V V A A A W ℃ ℃ Unit ℃/W ℃/W Rev A.
01 D020811 1 QM0007G P-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (-10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V ,...


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