DatasheetsPDF.com

QM0004S

UBIQ
Part Number QM0004S
Manufacturer UBIQ
Description N-Ch 100V Fast Switching MOSFETs
Published Dec 24, 2015
Detailed Description QM0004S N-Ch 100V Fast Switching MOSFETs General Description The QM0004S is the highest performance trench N-ch MOSFETs...
Datasheet PDF File QM0004S PDF File

QM0004S
QM0004S

Overview
QM0004S N-Ch 100V Fast Switching MOSFETs General Description The QM0004S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The QM0004S meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 100V RDSON 112mΩ ID 2.
5A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch SOP8 Pin Configuration DDDD Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 1 S SSG Rating 100 ±20 2.
5 2 10 7.
3 11 1.
5 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.
----- Max.
85 25 Unit ℃/W ℃/W Rev A.
03 D062611 QM0004S N-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capaci...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)