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QM2401J

UBIQ
Part Number QM2401J
Manufacturer UBIQ
Description P-Ch 20V Fast Switching MOSFETs
Published Dec 30, 2015
Detailed Description QM2401J P-Ch 20V Fast Switching MOSFETs General Description The QM2401J is the highest performance trench N-ch MOSFETs ...
Datasheet PDF File QM2401J PDF File

QM2401J
QM2401J

Overview
QM2401J P-Ch 20V Fast Switching MOSFETs General Description The QM2401J is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
The QM2401J meet the RoHS and Green Product requirement with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS -20V RDSON 60mΩ ID -4.
2A Applications z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch SOT89 Pin Configuration D Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.
5V1 Continuous Drain Current, VGS @ -4.
5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 GD S Rating -20 ±12 -4.
2 -3.
3 -16.
8 1.
5 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Typ.
----- Max.
85 30 Unit ℃/W ℃/W Rev A.
03 D051211 1 QM2401J P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Total Gate Charge (4.
5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=-250uA Reference t...


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