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QM2403J

UBIQ
Part Number QM2403J
Manufacturer UBIQ
Description P-Ch 20V Fast Switching MOSFETs
Published Dec 30, 2015
Detailed Description QM2403J P-Ch 20V Fast Switching MOSFETs General Description The QM2403J is the highest performance trench P-ch MOSFETs ...
Datasheet PDF File QM2403J PDF File

QM2403J
QM2403J


Overview
QM2403J P-Ch 20V Fast Switching MOSFETs General Description The QM2403J is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
The QM2403J meet the RoHS and Green Product requirement , with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Product Summery BVDSS -20V RDSON 55mΩ ID -4.
3A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch SOT89 Pin Configuration D Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.
5V1 Continuous Drain Current, VGS @ -4.
5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range GD S Rating -20 ±8 -4.
3 -3.
5 -17.
2 1.
5 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Typ.
----- Max.
85 30 Unit ℃/W ℃/W Rev A.
03 D051111 1 QM2403J P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) IDSS IGSS gfs Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate Threshold Voltage VGS(th) Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Transconductance Total Gate Charge (-4.
5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=-250uA Reference to 25℃ , I...


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