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FDB6670AS

Fairchild Semiconductor
Part Number FDB6670AS
Manufacturer Fairchild Semiconductor
Description 30V N-Channel PowerTrench SyncFET
Published Jan 15, 2016
Detailed Description FDP6670AS/FDB6670AS January 2005 FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ General Description This MOS...
Datasheet PDF File FDB6670AS PDF File

FDB6670AS
FDB6670AS

Overview
FDP6670AS/FDB6670AS January 2005 FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
The FDP6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
The performance of the FDP6670AS/FDB6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode.
Features • 31 A, 30 V.
RDS(ON) = 8.
5 mΩ @ VGS = 10 V RDS(ON) = 10.
5 mΩ @ VGS = 4.
5 V • Includes SyncFET Schottky body diode • Low gate charge (28nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability DD G D S TO-220 FDP Series G S TO-263AB FDB Series G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1) PD TJ, TSTG TL Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size FDB6670AS FDB6670AS 13’’ FDB6670AS FDB6670AS_NL (Note 3) 13’’ FDP6670AS FDP6670AS Tube FDP6670AS FDP6670AS_NL (Note 4) Tube Ratings 30 ±20 62 150 62.
5 0.
5 –55 to +150 275 2.
1 62.
5 Tape width 24mm 24mm n/a n/a S Units V V A W W/°C °C °C °C/W °C/W Quantity 800 units 800 units 45 45 ©2005 Fairchild Semiconductor Corporation FDP6670AS/FDB6670AS Rev A(X) FDP6670AS/FDB6670AS Electrical Characteristics Symbol Parameter TA = 25°C unl...


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