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FDB6670S

Fairchild Semiconductor
Part Number FDB6670S
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDP6670S/FDB6670S September 2001 FDP6670S/FDB6670S 30V N-Channel PowerTrench® SyncFET ™ General Description This MOSFE...
Datasheet PDF File FDB6670S PDF File

FDB6670S
FDB6670S

Overview
FDP6670S/FDB6670S September 2001 FDP6670S/FDB6670S 30V N-Channel PowerTrench® SyncFET ™ General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
The FDP6670S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
The performance of the FDP6670S/FDB6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode.
Features • 31 A, 30 V.
RDS(ON) = 8.
5 mΩ @ VGS = 10 V RDS(ON) = 12.
5 mΩ @ VGS = 4.
5 V • Includes SyncFET Schottky body diode • Low gate charge (23nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed T A =25 oC unless otherwise noted Parameter Ratings 30 ±20 (Note 1) (Note 1) Units V V A W W/°C °C °C 62 150 62.
5 0.
5 –55 to +150 275 Total Power Dissipation @ TC = 25° C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.
1 62.
5 °C/W °C/W Package Marking and Ordering Information Device Marking FDB6670S FDP6670S Device FDB6670S FDP6670S Reel Size 13’’ Tube Tape width 24mm n/a Quantity 800 units 45 © 2001 Fairchild Semiconductor Corporation FDP6670S/FDB6670S Rev E(W) FDP6670S/FDB6670S Electrical Characteristics Symbol W DSS IAR T A = 25°C unless otherwise noted Parameter (Note 1) Test Conditions VDD = 25 V, ID = 16.
5 A Min Typ Max Units 285 16.
5 mJ A...


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