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K2377

Panasonic
Part Number K2377
Manufacturer Panasonic
Description Silicon N-Channel Power F-MOS
Published Jan 16, 2016
Detailed Description Power F-MOS FETs 2SK2377 Silicon N-Channel Power F-MOS s Features q Avalanche energy capability guaranteed q High-spee...
Datasheet PDF File K2377 PDF File

K2377
K2377

Overview
Power F-MOS FETs 2SK2377 Silicon N-Channel Power F-MOS s Features q Avalanche energy capability guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive s Applications q Non-contact relay q Solenoid drive q Motor drive q Control equipment q Switching mode regulator s Absolute Maximum Ratings (Tc = 25˚C) Parameter Symbol Rating Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse Avalanche energy capability VDSS VGSS ID IDP EAS * 170 ±20 ±20 ±40 200 Allowable power dissipation TC= 25˚C Ta= 25˚C PD 50 2 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 * L=1mH, IL= 20A, 1 pulse Unit V V A A mJ W ˚C ˚C s Electrical Characteristics (Tc = 25˚C) Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Diode forward voltage Input capacitance Output capacitance Feedback capacitance Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Channel-Case heat resistance Channel-Atmosphere heat resistance Symbol IDSS IGSS VDSS Vth RDS(on) 1 RDS(on) 2 | Yfs | VDSF Ciss Coss Crss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) Condition VDS=140V, VGS= 0 VGS=±20V, VDS= 0 ID=1mA, VGS= 0 VDS=10V, ID=1mA VGS=10V, ID=10A VGS= 4V, ID=10A VDS=10V, ID=10A IDR=20A, VGS= 0 VDS=10V, VGS= 0, f=1MHz VDD=100V, ID=10A VGS=10V, RL=10Ω 14.
0±0.
5 Solder Dip 4.
0 16.
7±0.
3 7.
5±0.
2 0.
7±0.
1 2SK2377 10.
0±0.
2 5.
5±0.
2 Unit : mm 4.
2±0.
2 2.
7±0.
2 4.
2±0.
2 ø3.
1±0.
1 1.
3±0.
2 1.
4±0.
1 0.
8±0.
1 0.
5 +0.
2 -0.
1 2.
54±0.
25 5.
08±0.
5 123 1 : Gate 2 : Drain 3 : Source TO-220 Full Pack Package (a) Min Typ Max Unit 10 µ A ±1 µ A 170 V 1 2.
5 V 95 145 mΩ 105 160 mΩ 10 17 S –1.
6 V 1650 pF 400 pF 130 pF 10 ns 60 ns 280 ns 1500 ns 2.
5 ˚C/W 62.
5 ˚C/W Power F-MOS FETs 2SK2377 Drain current ID (A) Drain current ID (A) VGS=10V 3.
5V Area of safe operation (ASO) 100 ...


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