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SSF11NS65

GOOD-ARK
Part Number SSF11NS65
Manufacturer GOOD-ARK
Description 650V N-Channel MOSFET
Published Jan 16, 2016
Detailed Description Main Product Characteristics VDSS 650V RDS(on) 0.36ohm(typ.) ID 11A Features and Benefits  High dv/dt and avalanch...
Datasheet PDF File SSF11NS65 PDF File

SSF11NS65
SSF11NS65

Overview
Main Product Characteristics VDSS 650V RDS(on) 0.
36ohm(typ.
) ID 11A Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product TO-220 SSF11NS65 650V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description The SSF11NS65 series MOSFET is a new technology.
which combines an innovative super junction technology and advance process.
This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving.
Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V ① Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=22.
5mH Avalanche Current @ L=22.
5mH Operating Junction and Storage Temperature Range Max.
11 7 44 162 1.
5 650 ± 30 281 5 -55 to + 150 Units A W W/°C V V mJ A °C www.
goodark.
com Page 1 of 7 Rev.
1.
2 SSF11NS65 650V N-Channel MOSFET Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ.
— — — Max.
0.
77 62 40 Units ℃/W ℃/W ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min.
650 — — 2 — — — — -100 — — — — — — — — — — Typ.
— 0.
36 0.
88 — 2.
46 — — — — 28.
41 6.
64 12.
34 12.
85 9.
4...


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