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PJX8802

Pan Jit International
Part Number PJX8802
Manufacturer Pan Jit International
Description 20V N-CHANNEL MOSFET
Published Jan 19, 2016
Detailed Description PPJX8802 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V Current 0.7A SOT-563 Features  RDS(...
Datasheet PDF File PJX8802 PDF File

PJX8802
PJX8802

Overview
PPJX8802 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V Current 0.
7A SOT-563 Features  RDS(ON) , VGS@4,5V, ID@0.
7A<150mΩ  RDS(ON) , VGS@2.
5V, ID@0.
5A<220mΩ  RDS(ON) , VGS@1.
8V, ID@0.
2A<400mΩ  Advanced Trench Process Technology  Specially Designed for Load Switch or PWM application.
 ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std.
(Halogen Free) Mechanical Data  Case: SOT-563 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx.
Weight: 0.
00009 ounces, 0.
0026 grams  Marking: X02 Unit : inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT 20 +8 0.
7 2.
8 300 2.
4 -55~150 417 UNITS V V A A mW mW/ oC oC oC/W January 22,2015-REV.
01 Page 1 PPJX8802 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current SYMBOL BVDSS VGS(th) RDS(on) IDSS IGSS Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf IS TEST CONDITION VGS=0V, ID=250uA VDS=VGS, ID=250uA VGS=4.
5V, ID=0.
7A VGS=2.
5V, ID=0.
5A VGS=1.
8V, ID=0.
2A VDS=20V, VGS=0V VGS=+8V, VDS=0V VDS=10V, ID=0.
7A, VGS=4.
5V (Note 1,2) VDS=10V, VGS=0V, f=1.
0MHZ VDD=10V, ID=0.
7A, VGS=4.
5V, RG=6Ω (Note 1,2) --- Diode Fo...


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