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BLF178P

NXP
Part Number BLF178P
Manufacturer NXP
Description Power LDMOS transistor
Published Jan 27, 2016
Detailed Description BLF178P Power LDMOS transistor Rev. 2 — 16 February 2012 Product data sheet 1. Product profile 1.1 General descriptio...
Datasheet PDF File BLF178P PDF File

BLF178P
BLF178P

Overview
BLF178P Power LDMOS transistor Rev.
2 — 16 February 2012 Product data sheet 1.
Product profile 1.
1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band.
Table 1.
Application information Test signal CW pulsed RF f (MHz) 108 108 VDS PL (V) (W) 50 1000 50 1200 Gp (dB) 26 28.
5 D (%) 75 75 1.
2 Features and benefits  Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:  Output power = 1200 W  Power gain = 28.
5 dB  Efficiency = 75 %  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Exce...


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